View source for Category:Toshihiro KOBAYASHI

== Toshihiro KOBAYASHI ==

=== Executive Summary ===
Toshihiro KOBAYASHI is an inventor who has filed 5 patents. Their primary areas of innovation include SINGLE-CRYSTAL GROWTH  (by using ultra-high pressure, e.g. for the formation of diamonds, (4 patents), SINGLE-CRYSTAL GROWTH  (by using ultra-high pressure, e.g. for the formation of diamonds, (4 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (4 patents), and they have worked with companies such as KYOCERA Corporation (5 patents). Their most frequent collaborators include [[Category:Takeshi KAMIKAWA|Takeshi KAMIKAWA]] (5 collaborations), [[Category:Yuichiro HAYASHI|Yuichiro HAYASHI]] (5 collaborations), [[Category:Katsuaki MASAKI|Katsuaki MASAKI]] (4 collaborations).

=== Patent Filing Activity ===
[[File:Toshihiro_KOBAYASHI_Monthly_Patent_Applications.png|border|800px]]

=== Technology Areas ===
[[File:Toshihiro_KOBAYASHI_Top_Technology_Areas.png|border|800px]]

==== List of Technology Areas ====
* [[:Category:CPC_C30B25/04|C30B25/04]] (SINGLE-CRYSTAL GROWTH  (by using ultra-high pressure, e.g. for the formation of diamonds,): 4 patents
* [[:Category:CPC_C30B29/406|C30B29/406]] (SINGLE-CRYSTAL GROWTH  (by using ultra-high pressure, e.g. for the formation of diamonds,): 4 patents
* [[:Category:CPC_H01L21/0254|H01L21/0254]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
* [[:Category:CPC_H01L21/02647|H01L21/02647]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
* [[:Category:CPC_C30B25/183|C30B25/183]] (SINGLE-CRYSTAL GROWTH  (by using ultra-high pressure, e.g. for the formation of diamonds,): 3 patents
* [[:Category:CPC_C23C14/042|C23C14/042]] (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL  (making metal-coated products by extrusion): 2 patents
* [[:Category:CPC_C23C14/0617|C23C14/0617]] (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL  (making metal-coated products by extrusion): 2 patents
* [[:Category:CPC_C23C14/34|C23C14/34]] (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL  (making metal-coated products by extrusion): 2 patents
* [[:Category:CPC_C30B25/186|C30B25/186]] (SINGLE-CRYSTAL GROWTH  (by using ultra-high pressure, e.g. for the formation of diamonds,): 2 patents
* [[:Category:CPC_H01L21/02645|H01L21/02645]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
* [[:Category:CPC_H01L29/2003|H01L29/2003]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
* [[:Category:CPC_H01L21/0262|H01L21/0262]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L21/304|H01L21/304]] (Mechanical treatment, e.g. grinding, polishing, cutting {(): 1 patents
* [[:Category:CPC_H01L21/76871|H01L21/76871]] ({Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers}): 1 patents
* [[:Category:CPC_H01L33/007|H01L33/007]] ({comprising nitride compounds}): 1 patents
* [[:Category:CPC_H01L25/0753|H01L25/0753]] (the devices being of a type provided for in group): 1 patents
* [[:Category:CPC_H01L33/0093|H01L33/0093]] ({Wafer bonding; Removal of the growth substrate}): 1 patents
* [[:Category:CPC_H01L33/12|H01L33/12]] (with a stress relaxation structure, e.g. buffer layer): 1 patents
* [[:Category:CPC_H01L33/32|H01L33/32]] (containing nitrogen): 1 patents
* [[:Category:CPC_H01S5/0201|H01S5/0201]] (DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL): 1 patents
* [[:Category:CPC_H01S5/0206|H01S5/0206]] (DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL): 1 patents
* [[:Category:CPC_C30B29/38|C30B29/38]] (Nitrides): 1 patents
* [[:Category:CPC_H01L21/0237|H01L21/0237]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L21/02639|H01L21/02639]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
* [[:Category:CPC_H01L33/20|H01L33/20]] (with a particular shape, e.g. curved or truncated substrate): 1 patents

=== Companies ===
[[File:Toshihiro_KOBAYASHI_Top_Companies.png|border|800px]]

==== List of Companies ====
* KYOCERA Corporation: 5 patents

=== Collaborators ===
* [[:Category:Takeshi KAMIKAWA|Takeshi KAMIKAWA]][[Category:Takeshi KAMIKAWA]] (5 collaborations)
* [[:Category:Yuichiro HAYASHI|Yuichiro HAYASHI]][[Category:Yuichiro HAYASHI]] (5 collaborations)
* [[:Category:Katsuaki MASAKI|Katsuaki MASAKI]][[Category:Katsuaki MASAKI]] (4 collaborations)
* [[:Category:Yuta AOKI|Yuta AOKI]][[Category:Yuta AOKI]] (4 collaborations)
* [[:Category:Yuki TANIGUCHI|Yuki TANIGUCHI]][[Category:Yuki TANIGUCHI]] (1 collaborations)

[[Category:Toshihiro KOBAYASHI]]
[[Category:Inventors]]
[[Category:Inventors filing patents with KYOCERA Corporation]]