Category:Naoto Horiguchi: Difference between revisions

Naoto Horiguchi

Executive Summary

Naoto Horiguchi is an inventor who has filed 2 patents. Their primary areas of innovation include {by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general (2 patents), Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics} (2 patents), {Geometry or} layout of the interconnection structure {( (2 patents), and they have worked with companies such as IMEC VZW (2 patents). Their most frequent collaborators include (2 collaborations), (2 collaborations), (2 collaborations).

Patent Filing Activity

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Technology Areas

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List of Technology Areas

• H01L21/76879 ({by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating (plating on semiconductors in general): 2 patents
• H01L21/76802 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 2 patents
• H01L23/5286 ({Geometry or} layout of the interconnection structure {(): 2 patents
• H01L29/401 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents

Companies

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List of Companies

• IMEC VZW: 2 patents

Collaborators

• Boon Teik Chan (2 collaborations)
• Hans Mertens (2 collaborations)
• Zsolt Tokei (2 collaborations)