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| === Executive Summary === | | === Executive Summary === |
| Tomoyuki SASAKI is an inventor who has filed 9 patents. Their primary areas of innovation include Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices (4 patents), Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates (3 patents), {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} (3 patents), and they have worked with companies such as TDK CORPORATION (9 patents). Their most frequent collaborators include [[Category:Katsuyuki NAKADA|Katsuyuki NAKADA]] (3 collaborations), [[Category:Tatsuo SHIBATA|Tatsuo SHIBATA]] (2 collaborations), [[Category:Kazuumi INUBUSHI|Kazuumi INUBUSHI]] (2 collaborations). | | Tomoyuki SASAKI is an inventor who has filed 3 patents. Their primary areas of innovation include Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates (1 patents), Isolators (1 patents), Circulators (1 patents), and they have worked with companies such as TDK CORPORATION (3 patents). Their most frequent collaborators include [[Category:Yoshiaki SATO|Yoshiaki SATO]] (1 collaborations), [[Category:Shuji OKAME|Shuji OKAME]] (1 collaborations), [[Category:Zhenyao TANG|Zhenyao TANG]] (1 collaborations). |
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| === Patent Filing Activity === | | === Patent Filing Activity === |
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| ==== List of Technology Areas ==== | | ==== List of Technology Areas ==== |
| * [[:Category:CPC_H10B61/00|H10B61/00]] (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 4 patents
| | * [[:Category:CPC_H01F10/329|H01F10/329]] (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents |
| * [[:Category:CPC_H01F10/329|H01F10/329]] (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 3 patents | | * [[:Category:CPC_H01P1/36|H01P1/36]] (Isolators): 1 patents |
| * [[:Category:CPC_G01R33/098|G01R33/098]] ({comprising tunnel junctions, e.g. tunnel magnetoresistance sensors}): 3 patents
| | * [[:Category:CPC_H01P1/38|H01P1/38]] (Circulators): 1 patents |
| * [[:Category:CPC_G11B5/39|G11B5/39]] (INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer): 3 patents
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| * [[:Category:CPC_H10N50/85|H10N50/85]] (No explanation available): 3 patents
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| * [[:Category:CPC_G01R33/091|G01R33/091]] ({Constructional adaptation of the sensor to specific applications}): 2 patents
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| * [[:Category:CPC_G01R33/093|G01R33/093]] ({using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films): 2 patents
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| * [[:Category:CPC_G11B2005/3996|G11B2005/3996]] (INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer): 2 patents
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| * [[:Category:CPC_H03H2001/0057|H03H2001/0057]] (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing): 2 patents
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| * [[:Category:CPC_H03H7/06|H03H7/06]] (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing): 2 patents
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| * [[:Category:CPC_H10N52/85|H10N52/85]] (No explanation available): 2 patents
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| * [[:Category:CPC_G11C11/18|G11C11/18]] (STATIC STORES (semiconductor memory devices): 2 patents
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| * [[:Category:CPC_H10N50/01|H10N50/01]] (No explanation available): 2 patents
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| * [[:Category:CPC_H10N50/10|H10N50/10]] (No explanation available): 2 patents
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| * [[:Category:CPC_H10N52/80|H10N52/80]] (No explanation available): 2 patents
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| * [[:Category:CPC_G11C11/161|G11C11/161]] (using elements in which the storage effect is based on magnetic spin effect): 2 patents
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| * [[:Category:CPC_G11C11/1675|G11C11/1675]] ({Writing or programming circuits or methods}): 2 patents
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| * [[:Category:CPC_H01F10/3254|H01F10/3254]] (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 2 patents
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| * [[:Category:CPC_H10N50/80|H10N50/80]] (No explanation available): 2 patents
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| * [[:Category:CPC_H01L28/60|H01L28/60]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
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| * [[:Category:CPC_H01F17/0013|H01F17/0013]] (Fixed inductances of the signal type {(coils in general): 1 patents
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| * [[:Category:CPC_H01F27/292|H01F27/292]] (MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites): 1 patents
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| * [[:Category:CPC_H01F2017/0066|H01F2017/0066]] (MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites): 1 patents
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| * [[:Category:CPC_H10N52/101|H10N52/101]] (No explanation available): 1 patents | |
| * [[:Category:CPC_H10B61/22|H10B61/22]] (ELECTRONIC MEMORY DEVICES): 1 patents | |
| * [[:Category:CPC_G11C11/1659|G11C11/1659]] ({Cell access}): 1 patents
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| * [[:Category:CPC_G11C11/1673|G11C11/1673]] ({Reading or sensing circuits or methods}): 1 patents
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| * [[:Category:CPC_G06N3/063|G06N3/063]] (using electronic means): 1 patents
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| * [[:Category:CPC_H01L27/228|H01L27/228]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
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| * [[:Category:CPC_H01L43/02|H01L43/02]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
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| * [[:Category:CPC_H01L43/08|H01L43/08]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
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| * [[:Category:CPC_H01F17/00|H01F17/00]] (Fixed inductances of the signal type {(coils in general): 1 patents
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| * [[:Category:CPC_H10N50/20|H10N50/20]] (No explanation available): 1 patents | | * [[:Category:CPC_H10N50/20|H10N50/20]] (No explanation available): 1 patents |
| * [[:Category:CPC_H10N52/00|H10N52/00]] (No explanation available): 1 patents | | * [[:Category:CPC_H10B61/00|H10B61/00]] (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 1 patents |
| * [[:Category:CPC_G11C11/1697|G11C11/1697]] ({Power supply circuits}): 1 patents
| | * [[:Category:CPC_H10N50/85|H10N50/85]] (No explanation available): 1 patents |
| * [[:Category:CPC_H01F10/32|H01F10/32]] (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents
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| * [[:Category:CPC_H01L27/105|H01L27/105]] (including field-effect components): 1 patents
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| * [[:Category:CPC_H01L29/82|H01L29/82]] (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
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| * [[:Category:CPC_H03B15/00|H03B15/00]] (Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects): 1 patents
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| * [[:Category:CPC_H03B15/006|H03B15/006]] (Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects): 1 patents
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| * [[:Category:CPC_H10N52/01|H10N52/01]] (No explanation available): 1 patents | |
| * [[:Category:CPC_H01F10/3286|H01F10/3286]] (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents
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| === Companies === | | === Companies === |
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| ==== List of Companies ==== | | ==== List of Companies ==== |
| * TDK CORPORATION: 9 patents | | * TDK CORPORATION: 3 patents |
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| === Collaborators === | | === Collaborators === |
| * [[:Category:Katsuyuki NAKADA|Katsuyuki NAKADA]][[Category:Katsuyuki NAKADA]] (3 collaborations) | | * [[:Category:Yoshiaki SATO|Yoshiaki SATO]][[Category:Yoshiaki SATO]] (1 collaborations) |
| * [[:Category:Tatsuo SHIBATA|Tatsuo SHIBATA]][[Category:Tatsuo SHIBATA]] (2 collaborations)
| | * [[:Category:Shuji OKAME|Shuji OKAME]][[Category:Shuji OKAME]] (1 collaborations) |
| * [[:Category:Kazuumi INUBUSHI|Kazuumi INUBUSHI]][[Category:Kazuumi INUBUSHI]] (2 collaborations)
| | * [[:Category:Zhenyao TANG|Zhenyao TANG]][[Category:Zhenyao TANG]] (1 collaborations) |
| * [[:Category:Kaito ASAI|Kaito ASAI]][[Category:Kaito ASAI]] (1 collaborations)
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| * [[:Category:Yohei SHIOKAWA|Yohei SHIOKAWA]][[Category:Yohei SHIOKAWA]] (1 collaborations)
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| * [[:Category:Shogo YAMADA|Shogo YAMADA]][[Category:Shogo YAMADA]] (1 collaborations)
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| * [[:Category:Keita SUDA|Keita SUDA]][[Category:Keita SUDA]] (1 collaborations)
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| * [[:Category:Yukio TERASAKI|Yukio TERASAKI]][[Category:Yukio TERASAKI]] (1 collaborations) | |
| * [[:Category:Yugo ISHITANI|Yugo ISHITANI]][[Category:Yugo ISHITANI]] (1 collaborations) | |
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| [[Category:Tomoyuki SASAKI]] | | [[Category:Tomoyuki SASAKI]] |
| [[Category:Inventors]] | | [[Category:Inventors]] |
| [[Category:Inventors filing patents with TDK CORPORATION]] | | [[Category:Inventors filing patents with TDK CORPORATION]] |
Tomoyuki SASAKI
Executive Summary
Tomoyuki SASAKI is an inventor who has filed 3 patents. Their primary areas of innovation include Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates (1 patents), Isolators (1 patents), Circulators (1 patents), and they have worked with companies such as TDK CORPORATION (3 patents). Their most frequent collaborators include (1 collaborations), (1 collaborations), (1 collaborations).
Patent Filing Activity
File:Tomoyuki SASAKI Monthly Patent Applications.png
Technology Areas
File:Tomoyuki SASAKI Top Technology Areas.png
List of Technology Areas
- H01F10/329 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents
- H01P1/36 (Isolators): 1 patents
- H01P1/38 (Circulators): 1 patents
- H10N50/20 (No explanation available): 1 patents
- H10B61/00 (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 1 patents
- H10N50/85 (No explanation available): 1 patents
Companies
File:Tomoyuki SASAKI Top Companies.png
List of Companies
- TDK CORPORATION: 3 patents
Collaborators
