Category:Julien Frougier of Albany NY (US): Difference between revisions

Julien Frougier of Albany NY (US)

Executive Summary

Julien Frougier of Albany NY (US) is an inventor who has filed 15 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (9 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (9 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (8 patents), and they have worked with companies such as International Business Machines Corporation (10 patents), INTERNATIONAL BUSINESS MACHINES CORPORATION (5 patents). Their most frequent collaborators include (14 collaborations), (9 collaborations), (4 collaborations).

Patent Filing Activity

File:Julien Frougier of Albany NY (US) Monthly Patent Applications.png

Technology Areas

File:Julien Frougier of Albany NY (US) Top Technology Areas.png

List of Technology Areas

• H01L29/42392 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 9 patents
• H01L29/775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 9 patents
• H01L29/0673 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 8 patents
• H01L21/823807 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 5 patents
• H01L29/66439 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
• H01L29/78696 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
• H01L27/092 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
• H01L27/088 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
• H10D30/43 (No explanation available): 3 patents
• H10D30/014 (No explanation available): 3 patents
• H10D30/6735 (No explanation available): 3 patents
• H10D62/121 (No explanation available): 3 patents
• H10B10/125 (ELECTRONIC MEMORY DEVICES): 2 patents
• H01L27/0922 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L21/8221 ({Three dimensional integrated circuits stacked in different levels}): 2 patents
• H10D62/151 (No explanation available): 2 patents
• H10D64/017 (No explanation available): 2 patents
• H01L21/823481 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
• H01L29/41733 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/28123 ({Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects}): 1 patents
• H01L27/1207 ({combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits}): 1 patents
• H01L21/823462 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L21/823468 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L21/84 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/76229 (Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers}): 1 patents
• H01L21/76843 ({formed in openings in a dielectric}): 1 patents
• H01L21/823878 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L29/66977 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/0847 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H10B10/12 (ELECTRONIC MEMORY DEVICES): 1 patents
• H01L21/823871 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L21/823885 ({with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface (with a current flow parallel to the substrate surface): 1 patents
• H01L29/66666 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/7827 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/823864 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L29/66545 ({using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}): 1 patents
• H01L29/66553 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 1 patents
• H01L21/823412 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L23/5286 ({Geometry or} layout of the interconnection structure {(): 1 patents
• H10D30/6729 (No explanation available): 1 patents
• H10D64/01 (No explanation available): 1 patents
• H01L29/41766 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/76224 ({using trench refilling with dielectric materials (trench filling with polycristalline silicon): 1 patents
• H01L21/823475 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L29/0669 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H10D30/6757 (No explanation available): 1 patents
• H10D64/021 (No explanation available): 1 patents
• H10D84/0128 (No explanation available): 1 patents
• H10D84/013 (No explanation available): 1 patents
• H10D84/038 (No explanation available): 1 patents
• H10D84/83 (No explanation available): 1 patents

Companies

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List of Companies

• International Business Machines Corporation: 10 patents
• INTERNATIONAL BUSINESS MACHINES CORPORATION: 5 patents

Collaborators

• Ruilong Xie of Niskayuna NY (US) (14 collaborations)
• Min Gyu Sung of Latham NY (US) (9 collaborations)
• Juntao Li of Cohoes NY (US) (4 collaborations)
• Chanro Park of Clifton Park NY (US) (4 collaborations)
• Tao Li of Slingerlands NY (US) (4 collaborations)
• Shay Reboh of Guilderland NY (US) (3 collaborations)
• Tenko Yamashita of Schenectady NY (US) (2 collaborations)
• Liqiao Qin of Albany NY (US) (2 collaborations)
• Jingyun Zhang of Albany NY (US) (2 collaborations)
• Leon Sigal of Monsey NY (US) (1 collaborations)
• Rishikesh Krishnan of Cohoes NY (US) (1 collaborations)
• Erin Stuckert of Albany NY (US) (1 collaborations)
• Nicolas Jean Loubet of GUILDERLAND NY (US) (1 collaborations)
• Susan Ng Emans of Albany NY (US) (1 collaborations)
• Shay Reboh of Albany NY (US) (1 collaborations)
• Reinaldo Vega of Mahopac NY (US) (1 collaborations)
• Shahrukh Khan of Sandy Hook CT (US) (1 collaborations)
• Biswanath Senapati of Mechanicville NY (US) (1 collaborations)