Category:Tomoyuki SASAKI

Tomoyuki SASAKI

Executive Summary

Tomoyuki SASAKI is an inventor who has filed 9 patents. Their primary areas of innovation include Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices (4 patents), Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates (3 patents), {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} (3 patents), and they have worked with companies such as TDK CORPORATION (9 patents). Their most frequent collaborators include (3 collaborations), (2 collaborations), (2 collaborations).

Patent Filing Activity

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Technology Areas

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List of Technology Areas

• H10B61/00 (Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices): 4 patents
• H01F10/329 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 3 patents
• G01R33/098 ({comprising tunnel junctions, e.g. tunnel magnetoresistance sensors}): 3 patents
• G11B5/39 (INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer): 3 patents
• H10N50/85 (No explanation available): 3 patents
• G01R33/091 ({Constructional adaptation of the sensor to specific applications}): 2 patents
• G01R33/093 ({using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films): 2 patents
• G11B2005/3996 (INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer): 2 patents
• H03H2001/0057 (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing): 2 patents
• H03H7/06 (IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (measuring, testing): 2 patents
• H10N52/85 (No explanation available): 2 patents
• G11C11/18 (STATIC STORES (semiconductor memory devices): 2 patents
• H10N50/01 (No explanation available): 2 patents
• H10N50/10 (No explanation available): 2 patents
• H10N52/80 (No explanation available): 2 patents
• G11C11/161 (using elements in which the storage effect is based on magnetic spin effect): 2 patents
• G11C11/1675 ({Writing or programming circuits or methods}): 2 patents
• H01F10/3254 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 2 patents
• H10N50/80 (No explanation available): 2 patents
• H01L28/60 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01F17/0013 (Fixed inductances of the signal type  {(coils in general): 1 patents
• H01F27/292 (MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites): 1 patents
• H01F2017/0066 (MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites): 1 patents
• H10N52/101 (No explanation available): 1 patents
• H10B61/22 (ELECTRONIC MEMORY DEVICES): 1 patents
• G11C11/1659 ({Cell access}): 1 patents
• G11C11/1673 ({Reading or sensing circuits or methods}): 1 patents
• G06N3/063 (using electronic means): 1 patents
• H01L27/228 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L43/02 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L43/08 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01F17/00 (Fixed inductances of the signal type  {(coils in general): 1 patents
• H10N50/20 (No explanation available): 1 patents
• H10N52/00 (No explanation available): 1 patents
• G11C11/1697 ({Power supply circuits}): 1 patents
• H01F10/32 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents
• H01L27/105 (including field-effect components): 1 patents
• H01L29/82 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H03B15/00 (Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects): 1 patents
• H03B15/006 (Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects): 1 patents
• H10N52/01 (No explanation available): 1 patents
• H01F10/3286 (Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates): 1 patents

Companies

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List of Companies

• TDK CORPORATION: 9 patents

Collaborators

• Katsuyuki NAKADA (3 collaborations)
• Tatsuo SHIBATA (2 collaborations)
• Kazuumi INUBUSHI (2 collaborations)
• Kaito ASAI (1 collaborations)
• Yohei SHIOKAWA (1 collaborations)
• Shogo YAMADA (1 collaborations)
• Keita SUDA (1 collaborations)
• Yukio TERASAKI (1 collaborations)
• Yugo ISHITANI (1 collaborations)