Category:Anindya Nath of Essex Junction VT (US)

Anindya Nath of Essex Junction VT (US)

Executive Summary

Anindya Nath of Essex Junction VT (US) is an inventor who has filed 7 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (2 patents), {including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices} (2 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (2 patents), and they have worked with companies such as GlobalFoundries U.S. Inc. (7 patents). Their most frequent collaborators include (4 collaborations), (4 collaborations), (3 collaborations).

Patent Filing Activity

File:Anindya Nath of Essex Junction VT (US) Monthly Patent Applications.png

Technology Areas

File:Anindya Nath of Essex Junction VT (US) Top Technology Areas.png

List of Technology Areas

• H01L23/5256 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L27/0262 ({including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices}): 2 patents
• H01L29/735 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L23/345 (Arrangements for cooling, heating, ventilating or temperature compensation {; Temperature sensing arrangements (thermal treatment apparatus): 1 patents
• H01L23/62 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/87 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L25/072 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/77 (Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate (electrically programmable read-only memories or multistep manufacturing processes therefor): 1 patents
• H01L23/147 ({Semiconductor insulating substrates (semiconductor conductive substrates): 1 patents
• H01L23/5228 ({Resistive arrangements or effects of, or between, wiring layers (other resistive arrangements): 1 patents
• H01L29/7455 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L27/0255 ({using diodes as protective elements}): 1 patents
• H01L29/7302 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/7393 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L27/0259 ({using bipolar transistors as protective elements}): 1 patents
• H01L21/763 (Making of isolation regions between components): 1 patents
• H01L27/11206 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents

Companies

File:Anindya Nath of Essex Junction VT (US) Top Companies.png

List of Companies

• GlobalFoundries U.S. Inc.: 7 patents

Collaborators

• Alain F. Loiseau of Williston VT (US) (4 collaborations)
• Rajendran Krishnasamy of Essex Junction VT (US) (4 collaborations)
• Souvick Mitra of Essex Junction VT (US) (3 collaborations)
• Robert J. Gauthier, JR. of Williston VT (US) (3 collaborations)
• Anupam Dutta (2 collaborations)
• Shesh M. Pandey of Saratoga Springs NY (US) (1 collaborations)
• Chung F. Tan of Ballston Spa NY (US) (1 collaborations)
• Judson R. Holt of Ballston Lake NY (US) (1 collaborations)
• Vvss Satyasuresh Choppalli (1 collaborations)
• Robert Gauthier, JR. of Williston VT (US) (1 collaborations)
• Xiang Xiang Lu of Essex Junction VT (US) (1 collaborations)
• Satyasuresh Vvss Choppalli (1 collaborations)
• Rajendran Krishnasamy of Essex Jucntion VT (US) (1 collaborations)
• Ephrem G. Gebreselasie of South Burlington VT (US) (1 collaborations)