Category:Rajendran Krishnasamy of Essex Junction VT (US)

Rajendran Krishnasamy of Essex Junction VT (US)

Executive Summary

Rajendran Krishnasamy of Essex Junction VT (US) is an inventor who has filed 14 patents. Their primary areas of innovation include {including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices} (3 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (3 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (2 patents), and they have worked with companies such as GlobalFoundries U.S. Inc. (14 patents). Their most frequent collaborators include (4 collaborations), (4 collaborations), (3 collaborations).

Patent Filing Activity

File:Rajendran Krishnasamy of Essex Junction VT (US) Monthly Patent Applications.png

Technology Areas

File:Rajendran Krishnasamy of Essex Junction VT (US) Top Technology Areas.png

List of Technology Areas

• H01L27/0262 ({including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices}): 3 patents
• H01L29/7816 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
• H01L29/401 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/0642 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/66681 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/475 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/66462 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/7786 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/87 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L25/072 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/77 (Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate (electrically programmable read-only memories or multistep manufacturing processes therefor): 1 patents
• H01L23/147 ({Semiconductor insulating substrates (semiconductor conductive substrates): 1 patents
• H01L23/5228 ({Resistive arrangements or effects of, or between, wiring layers (other resistive arrangements): 1 patents
• H01L29/7455 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/02203 ({the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers): 1 patents
• H01L21/31111 ({by chemical means}): 1 patents
• H01L29/7833 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L31/022408 ({for devices characterised by at least one potential jump barrier or surface barrier}): 1 patents
• H01L31/03125 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L31/1037 (the potential barrier being of the PN homojunction type): 1 patents
• H01L31/1812 (Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof): 1 patents
• H03K17/08 (Modifications for protecting switching circuit against overcurrent or overvoltage): 1 patents
• H01L29/404 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/30604 (Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers): 1 patents
• H01L21/308 (using masks (): 1 patents
• H01L21/76224 ({using trench refilling with dielectric materials (trench filling with polycristalline silicon): 1 patents
• H01L29/42376 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/0657 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/0847 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/42356 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/4916 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/6653 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 1 patents
• H01L31/02327 (Optical elements or arrangements associated with the device (): 1 patents
• H01L31/028 (including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table): 1 patents
• H01L31/105 (characterised by potential barriers, e.g. phototransistors): 1 patents
• H01L31/1808 (Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof): 1 patents
• H01L27/11206 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L23/5256 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/735 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L27/1203 ({the substrate comprising an insulating body on a semiconductor body, e.g. SOI (three-dimensional layout): 1 patents
• H01L21/76286 (Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers}): 1 patents
• H01L21/84 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents

Companies

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List of Companies

• GlobalFoundries U.S. Inc.: 14 patents

Collaborators

• Robert J. Gauthier, JR. of Williston VT (US) (4 collaborations)
• Anindya Nath of Essex Junction VT (US) (4 collaborations)
• Shesh Mani Pandey of Saratoga Springs NY (US) (3 collaborations)
• Sagar Premnath Karalkar of Essex Junction VT (US) (2 collaborations)
• Ephrem G. Gebreselasie of South Burlington VT (US) (2 collaborations)
• Souvick Mitra of Essex Junction VT (US) (2 collaborations)
• Santosh Sharma of Austin TX (US) (2 collaborations)
• Anupam Dutta (2 collaborations)
• John J. Ellis-Monaghan of Grand Isle VT (US) (2 collaborations)
• Siva P. Adusumilli of South Burlington VT (US) (2 collaborations)
• Megan Lydon-Nuhfer of Essex Junction VT (US) (2 collaborations)
• Steven M. Shank of Jericho VT (US) (2 collaborations)
• Michel Abou-Khalil of Essex Junction VT (US) (2 collaborations)
• Vvss Satyasuresh Choppalli (1 collaborations)
• Robert Gauthier, JR. of Williston VT (US) (1 collaborations)
• Xiang Xiang Lu of Essex Junction VT (US) (1 collaborations)
• Satyasuresh Vvss Choppalli (1 collaborations)
• Ramsey M. Hazbun of Colchester VT (US) (1 collaborations)
• Johnatan Avraham Kantarovsky of South Burlington VT (US) (1 collaborations)
• Kaustubh Shanbhag of Slingerlands NY (US) (1 collaborations)
• Judson R. Holt of Ballston Lake NY (US) (1 collaborations)
• Ephrem Gebreselasie of South Burlington VT (US) (1 collaborations)
• Aaron L. Vallett of Jericho VT (US) (1 collaborations)
• Sarah A. McTaggart of Essex Junction VT (US) (1 collaborations)
• Ramsey Hazbun of Colchester VT (US) (1 collaborations)
• Alain F. Loiseau of Williston VT (US) (1 collaborations)
• Sarah McTaggart of Essex Junction VT (US) (1 collaborations)
• Aaron Vallett of Jericho VT (US) (1 collaborations)